Tekbox TBMDA4 / 5 W power amplifier modulable, frequency range: 100 kHz..50 MHz

TBMDA4B Modulated Power Amplifier
The TBMDA4B broadband modulated power amplifier is designed to provide a cost-effective signal source for immunity testing of electronic assemblies and products. It is designed to be controlled by the tracking generator output of spectrum analyzers. With an input power range of -20 dBm...-10 dBm, it can increase the output power of a tracking generator up to 5 W. With a frequency range of 100 kHz to 75 MHz, it is an ideal complement to the TBMDA3, which covers 10 MHz to 1 GHz.
The TBMDA4B is ideal for controlling Tekbox near-field probes to find the sensitive point of an electronic circuit or for electrical fields up to 550V/m when controlling the Tekbox TEM Cell TBTC0, 300V/m when controlling the TBTC1, 150V /m when controlling the TBTC2 or 100V/m when controlling the TBTC3. The test signals for the immunity test can be CW, AM or PM modulated. Therefore, the TBMDA4B offers a built-in modulation option for generating 1 kHz AM or PM signals. In PM mode, the TBMDA4B can also generate a 217 Hz signal with 12.5% duty cycle to simulate cell phone TDMA noise.
FEATURESECW amplifier (modulation off) 1 kHz, 80% AM modulation 1 kHz, 50% duty cycle pulse modulation 217 Hz, 12.5% duty cycle pulse modulation SPECIFICATIONS
Input / output: 50 ohm, N socket
Supply voltage range: 110 V... 240 V
Power consumption of the supply: 20 W
Operating temperature range: -20°C to 50°C
Frequency range: 100 kHz - 75 MHz
Saturated output power at 100 kHz / Pin = -10 dBm: 36.6 dBm (4.6 W) typ.
Saturated Output power at 1 MHz / Pin = -10 dBm: 37.6 dBm (5.8 W) typ.
Saturated output power at 10 MHz / Pin = -10 dBm: 37.6 dBm (5.8 W) typ.
Saturated output power at 35 MHz / Pin = -10 dBm: 37.1 dBm (5.1W) typ.
Saturated output power at 75 MHz / Pin = -10 dBm: 36.6 dBm (4.6 W) typ.
Saturated output power at 100 MHz / Pin = -10 dBm: 31.6 dBm (1.4 W) typ.
1dB output compression point at 1 MHz: +35.7 dBm typ.
1dB output compression point at 35 MHz: +34.8 dBm typ.
1dB output compression point at 75 MHz: +34.1 dBm typ. 2nd
harmonic, 35 MHz, Pout=36dBm: < - 18 dBc typ. 2nd
harmonic, 35 MHz, Pout=30dBm: < - 21 dBc typ. 3rd
harmonic, 35 MHz, Pout=36dBm: < - 19 dBc typ.
3rd harmonic, 35 MHz, Pout=30dBm: < - 35 dBc typ.
Total harmonic distortion:
5.9% @35MHz, Pout=27dBm typ.
8.4% at 35 MHz, Pout=30 dBm typ.
12.3% at 35 MHz, Pout=33 dBm typ.
18.1% at 35 MHz, Pout= 36 dBm typ.
Third order intercept point:
+53dBm, @25 MHz, ? f = 200kHz typ.
Noise figure: @35 MHz: 7.2 dB
Internal modulation frequency AM: 1 kHz ±20%
Internal modulation frequencies PM: 1 kHz ±10%, 217 Hz ±20%
duty cycle, PM: 50% ±10% at 1 kHz 12.5% ±20% at 217 Hz
APPLICATIONGeneral purpose power amplifier Signal source for interference immunity tests, driving near-field probes Signal source for interference immunity tests, driving TEM cells