Tekbox TBMDA3B
5 W power amplifier modulable, frequency range: 10 MHz..1 GHz

Modulated Power Amplifier TBMDA3B
The broadband modulated power amplifier TBMDA3B (10MHz - 1 GHz) was developed as a cost-effective RF power source for preliminary immunity testing of electronic assemblies and products. Driven with an input power of less than 0dBm, it can deliver a saturated output power of up to 8W. The TBMDA3 is ideal for driving Tekbox near-field probes to find the sensitive location of electronic circuits or for generating strong electric fields for testing radiation immunity in TEM cells. It can generate up to 700V/m when operating the Tekbox TEM cell TBTC0, 400V/m when operating the TBTC1, 200V/m when operating the TBTC2 and 130V/m when operating the TBTC3.
A built-in AM modulator allows tracking generators to be used as a signal source. The TBMDA3B has sufficient gain to achieve its maximum output power when operated with the tracking generator of a spectrum analyzer. In addition to 1 kHz, 80% AM, the TBMDA3B offers a built-in modulation option for generating 1 kHz, 50% duty cycle PM signals. In PM mode, the TBMDA3B can also generate a 217 Hz signal with 12.5% duty cycle to simulate the TDMA noise of a cell phone.
APPLICATIONBroadband RF power amplifier for conducted immunity testing for driving CDNs or BCI probes Broadband RF power amplifier for radiated immunity testing, driving near-field probes Broadband RF power amplifier for radiated immunity testing, driving TEM cells FEATURESECW amplifier ( Modulation off) 1 kHz, 80% AM modulation 1 kHz, 50% duty cycle pulse modulation 217 Hz, 12.5% duty cycle pulse modulation SPECIFICATIONS
Technical data:Input / output: 50 Ohm, N socket Supply voltage range: 110 V...240 V Power consumption: 25 W @ 220 V Operating temperature range: -20°C to 50°C Frequency range: 10 MHz - 1 GHz, usable from 5 MHz to 1.1 GHz small signal gain: 42.5 dB typ. Gain flatness 10 MHz - 1 GHz / Pin = -15 dBm: 2.5 dB typ. Saturated output power at 5 MHz / Pin = 0 dBm: 38. 9 dBm (7.8 W) typ. Saturated output power at 10 MHz / Pin = 0 dBm: 39.1 dBm (8.2 W) typ. Saturated output power at 50 MHz / Pin = 0 dBm: 39.8 dBm (9 .5 W) typ. Saturated output power at 75 MHz / Pin = 0 dBm: 39.9 dBm (9.8 W) typ. Saturated output power at 100 MHz / Pin = 0 dBm: 39.9 dBm (9.7 W) typ. Saturated output power at 250 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ Saturated output power at 250 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ Saturated output power at 250 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ. Saturated output power at 500 MHz / Pin = 0 dBm: 40.5 dBm (11.2 W) typ. Saturated output power at 750 MHz / Pin = 0 dBm: 39.5 dBm (8.9 W) typ. Saturated output power at 750 MHz / Pin = 0 dBm: 39.5 dBm (8.9 W) typ. Saturated output power at 750 MHz / Pin = 0 dBm: 39 .5 dBm (8.9 W) typ. Saturated output power at 1 GHz / Pin = 0 dBm: 38.8 dBm (7.6 W) typ. Saturated output power at 1.1 GHz / Pin = 0 dBm: 38.3 dBm (6.8 W) typ. 1dB output compression point at 5 MHz: 38.2 dBm typ. (Pin: -2 dBm) 1dB output compression point at 10 MHz: 38.7 dBm typ. (Pin: -3 dBm) 1dB -Output compression point at 50 MHz: 39.1 dBm typ. (Pin: -3 dBm) 1dB output compression point at 100 MHz: 39.7 dBm typ. (Pin: -1 dBm) 1dB output compression point at 250 MHz: 39.9 dBm typ . (Pin: -2 dBm) 1dB output compression point at 500 MHz: 39.4 dBm typ. (Pin: -3 dBm) 1dB output compression point at 750 MHz: 38.8 dBm typ. (Pin: -3 dBm) 1dB- Output compression point at 1000 MHz: 37 dBm typ. (Pin: -5 dBm) 1dB output compression point at 1100 MHz: 36.9 dBm typ. (Pin: -5 dBm) 2nd harmonic, 100 MHz, Pout = 39.9 dBm: < - 27 dBc typ. 2nd harmonic, 100 MHz, Pout = 34 dBm: < - 13.5 dBc typ. 3rd harmonic, 100 MHz, Pout = 39.9 dBm: < - 12 dBc typ. 3rd harmonic, 100 MHz, Pout = 34 dBm: < - 24 dBc typ. Total harmonic distortion: 18.9% @100 MHz, Pout = 31 dBm typ. 21.8% at 100 MHz, Pout = 34 dBm typ. 23.4% at 100 MHz, Pout = 37 dBm typ 31.1% at 100 MHz, Pout = 39.9 dBm typ. Third order output intercept point: 44 dBm, @100 MHz, ? f = 2 MHz, typ. Internal modulation frequency AM: 1 kHz ± 20% Internal modulation frequencies PM: 1 kHz ± 20%, 217 Hz ± 20% duty cycle, PM: 50% ± 10% at 1 kHz 12.5% ± 20% at 217 Hz Maximum ratings:
Maximum input power: +0 dBm