Tekbox TBMDA5

Tekbox TBMDA5

Tekbox TBMDA5

Lieske Part No.2113268
Mfg Part NoTBMDA5
EAN-Code
Manufacturer Tekbox
Here only 1.077,64 EUR
1.282,39 EUR incl. VAT

Further information for Tekbox TBMDA5

TBMDA5 Modulated Power Amplifier
The TBMDA5 modulated power amplifier provides the power, bandwidth and modulation required for conducted immunity testing with CDNs in the frequency range of 150 kHz to 400 MHz. It is designed to be controlled by the tracking generator output of spectrum analyzers.
With a 1dB compression point of up to 2.5W in the frequency range of 150kHz to 400MHz, it can produce Class 1 and Class 2 test levels according to ISO/EN 61000-4-6. A built-in AM modulator allows tracking generators to be used as a signal source.
The TBMDA5 has sufficient gain to achieve the maximum output power at 0 dBm provided by a spectrum analyzer tracking generator.
In addition to 1 kHz, 80% AM, the TBMDA5 offers a built-in modulation option for generating 1 kHz, 50% duty cycle PM signals. In PM mode, the TBMDA5 can also generate a 217 Hz signal with 12.5% duty cycle to simulate cell phone TDMA noise.
FEATURESECW amplifier (modulation off) 1 kHz, 80% AM modulation 1 kHz, 50% duty cycle pulse modulation 217 Hz 12.5% duty cycle pulse modulation SPECIFICATIONS
Input / output: 50 ohm, N socket
Supply voltage range: 110 V...240 V
Power consumption of the supply: 19 W @ 220 V
Operating temperature range: -20°C to 50°C
Frequency range: 150 kHz - 400 MHz, usable from 100 kHz to 1.2 GHz Small signal gain: 38 dB typ.
Flatness of the gain 150 kHz - 400 MHz / Pin = -5 dBm: 3.5 dB typ.
Saturated output power at 150 kHz / Pin = 0 dBm: 32.6 dBm (1.8 W) typ.
Saturated output power at 500 kHz / Pin = 0 dBm: 36 dBm (4 W) typ.
Saturated output power at 1 MHz / Pin = 0 dBm: 36.1 dBm (4.1 W) typ.
Saturated output power at 10 MHz / Pin = 0 dBm: 37.8 dBm (6 W) typ.
Saturated output power at 100 MHz / Pin = 0 dBm: 36.4 dBm (4.4 W) typ.
Saturated output power at 250 MHz / Pin = 0 dBm: 36 dBm (4 W) typ.
Saturated output power at 400 MHz / Pin = 0 dBm: 33.7 dBm (2.3 W) typ.
Saturated output power at 750 MHz / Pin = 0 dBm: 33.2 dBm (2.1 W) typ.
Saturated output power at 1 GHz / Pin = 0 dBm: 34 .8 dBm (3 W) typ.
Saturated output power at 1.1 GHz / Pin = 0 dBm: 31.1 dBm (1.3 W) typ.
Saturated output power at 1.2 GHz / Pin = 0 dBm: 27.3 dBm (0.5 W) typ.
1dB output compression point at 150 kHz: +29.6 dBm typ. (Pin: -9 dBm)
1dB output compression point at 500 kHz: +32.9 dBm typ. (Pin: -6 dBm)
1dB output compression point at 1 MHz: +33.1 dBm typ. (Pin: -5 dBm)
APPLICATION
General purpose broadband RF power amplifier
Wideband RF power amplifier for conducted immunity tests for driving CDNs or BCI probes
Wideband RF power amplifier for radiated interference immunity tests, for controlling near-field probes.
Broadband RF power amplifier for radiated interference immunity testing, for controlling TEM cells
This is an offer of:

Lieske Elektronik e.K.

Reutener Str. 10
79279 Vörstetten

http://industry-electronics.com
Tel. 07666/88499-0
Fax. 07666/88499-111

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